Electrical and optical properties of Cu–Cr–O thin films fabricated by chemical vapour deposition
作者： P. Lunca Popa , J. Crêpellière , R. Leturcq , D. Lenoble
DOI: 10.1016/J.TSF.2016.05.052
关键词:
摘要: Abstract We present electrical and optical properties of CuCrO2 thin films deposited by chemical vapour deposition, as well the influence depositions' parameters on these properties. Oxygen partial pressure precursor's concentrations have greatest films. Values conductivities ranging from 10− 4 to 10 S/cm were obtained using different deposition conditions. The conductivity is thermally activated with an activation energy 57 283 meV. Thermoelectric measurements confirm p-type conduction, demonstrate high carrier concentration typical for a degenerate semiconductor. as-deposited show medium degree crystallinity, maximum transmission up 80% in visible range corresponding band gap around 3.2 eV.
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