Inter-wafer bonding strength characterization by laser-induced shock waves
作者： George Youssef , Caroline Moulet , Mark S. Goorsky , Vijay Gupta
DOI: 10.1063/1.4710987
关键词: Compressive strength 、 Free surface 、 Spallation 、 Ultimate tensile strength 、 Composite material 、 Annealing (metallurgy) 、 Wafer bonding 、 Bond strength 、 Wafer 、 Materials science
摘要: A previously developed laser spallation experiment to measure the tensile strength of thin film interfaces is extended quantify intrinsic bonded wafers. In this experiment, a generated compressive stress wave on back surface one wafer reflects into after reflecting from free second separate inter-wafer bond. Optical interferometery used in conjunction with mechanics simulation bond strength. The technique was study dependence annealing temperature which varied between 200 °C and 1100 °C. peak value 3.91 GPa reported at We show that measured values compares well bonding energies by alternate methods.
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