Measurement of residual stress of PZT thin film on Si(100) by synchrotron X-ray rocking curve technique
作者： Y.H. Yu , M.O. Lai , L. Lu , P. Yang
DOI: 10.1016/J.JALLCOM.2006.02.109
关键词: Optics 、 Single crystal 、 Amorphous solid 、 Crystallite 、 Thin film 、 Composite material 、 Pulsed laser deposition 、 Materials science 、 Substrate (electronics) 、 Residual stress 、 Crystal 、 Mechanical engineering 、 Materials Chemistry 、 Mechanics of Materials 、 Metals and Alloys
摘要: Abstract ( l 0 0) oriented Pb(Zr,Ti)O3 (PZT) and LaNiO3 (LNO) thin films were grown on SiO 2 /(1 0 0) Si substrate by pulsed laser deposition. The bending of the crystal planes single substrates is assessed high-resolution X-ray rocking curve technique (HRRC) with a high quality monochromatic intensity synchrotron radiation. residual stress then calculated from change in curvature before after depositing film based well-known modified Stoney's equation. More reliable results can be achieved because they are not affected surface morphology reflectivity films. HRRC applied to all kinds including randomly polycrystalline, amorphous PZT silicon was measured 189 MPa.
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