Optical and electrical properties of highly (100)-oriented PbZr1−xTixO3 thin films on the LaNiO3 buffer layer
作者： Jian Yu , X. J. Meng , J. L. Sun , Z. M. Huang , J. H. Chu
DOI: 10.1063/1.1775305
关键词: Thin film 、 Dielectric 、 Lattice constant 、 Wafer 、 Analytical chemistry 、 Substrate (electronics) 、 Grain size 、 Silicon 、 Layer (electronics) 、 Materials science 、 Composite material 、 General Physics and Astronomy
摘要: In this paper, using wet chemical solution deposition processes, the (100)-highly oriented LaNiO3 buffer layers were grown on both silicon and platinized wafers and, sequentially, highly (100)-oriented PbZr1−xTixO3 thin films with various compositions obtained them. The misfit elastic strains found to be critical factors determine orientation of PZT films, even though used layer reduces lattice mismatch between wafers. For x=0.5 0.6 LaNiO3/platinized substrate, infrared optical constant, ferroelectric, dielectric properties characterized analyzed relation film grain size. It was that finite size effect here played a key role in determining these electrical properties. With nanoferroelectric it is most useful way controlling crystallographic tune perf...
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