Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

作者: JL Liu , J Wan , ZM Jiang , A Khitun , KL Wang

DOI: 10.1063/1.1518756

关键词: Molecular beam epitaxyQuantum dotCondensed matter physicsSuperlatticeRelaxation (NMR)Raman scatteringPhononRaman spectroscopyMaterials scienceStress relaxation

摘要: We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown by solid-source molecular beam epitaxy. The Ge quantum dots are vertically …

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