作者: JL Liu , J Wan , ZM Jiang , A Khitun , KL Wang
DOI: 10.1063/1.1518756
关键词: Molecular beam epitaxy 、 Quantum dot 、 Condensed matter physics 、 Superlattice 、 Relaxation (NMR) 、 Raman scattering 、 Phonon 、 Raman spectroscopy 、 Materials science 、 Stress relaxation
摘要: We present Raman scattering by optical phonons in self-assembled Ge quantum dot superlattices grown by solid-source molecular beam epitaxy. The Ge quantum dots are vertically …