Raman scattering analysis of relaxed GexSi1−xalloy layers
作者： P. M. Mooney , F. H. Dacol , J. C. Tsang , J. O. Chu
DOI: 10.1063/1.109481
关键词: X-ray Raman scattering 、 Silicon 、 Analytical chemistry 、 Raman spectroscopy 、 Molecular physics 、 Germanium 、 Raman scattering 、 X-ray crystallography 、 Chemistry 、 Stress relaxation 、 Phonon
摘要: … Raman scattering to evaluate epitaxial Ge,Sii-, layers grown by UHV chemical vapor deposition.” We show that thick alloy … The uniform alloy layers used in this study are at least 5000 A …
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