X-ray reciprocal space mapping of Si/Si 1−x Ge x heterostructures
作者： Günther Bauer , Jianhua Li , Ewald Koppensteiner
DOI: 10.1016/B978-0-444-82411-0.50021-8
关键词: Relaxation (NMR) 、 Reciprocal lattice 、 Chemistry 、 Crystallography 、 Condensed matter physics 、 Heterojunction 、 X-ray 、 High resolution 、 Molecular beam epitaxy 、 Mapping techniques 、 Strain (chemistry)
摘要: The analysis of composition, strain, and strain relaxation in molecular beam epitaxy grown Si/SiGe structures is described, based on the use reciprocal space mapping techniques employing high resolution triple axis X-ray diffractometry.
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