Triple-axis X-ray Reciprocal Space Mapping of In(y)Ga(1-y)As Thermophotovoltaic Diodes Grown on (100) InP Substrates

摘要: Analysis of the composition, strain-relaxation, layer-tilt, and crystalline quality In{sub y}Ga{sub 1-y}As/InP{sub 1-x}As{sub x} thermophotovoltaic (TPV) diodes grown by metal organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis x-ray reciprocal space mapping techniques. 0.53}Ga{sub 0.47}As (E{sub gap} = 0.74eV) n/p junction are lattice matched (LM) to InP substrates mismatched (LMM) 0.67}Ga{sub 0.33}As 0.6eV) TPV on three-step InP{sub (0 < x 0.32) buffer layers substrates. X-ray maps about symmetric (400) asymmetric (533) points (RELPs) determine in-plane out-of-plane parameters strain 1-y}As active layer underlying buffers. Triple-axis rocking curves LMM RELP show an order magnitude increase its full width at half maximum (FWHM) compared that from LM (250asec vs. 30asec). Despite significant broadening photovoltaic figure merits electronic approaches diode material. This indicates misfit-related imperfections not dominating responsemore » optimized material with intrinsic recombination processes and/or through native point defects which would be present in both However, additional non-optimized does correspond degradation open circuit voltage minority carrier lifetime demonstrating there correlation between FWHM performance diodes.« less