Comprehensive study of Cp2Mg p-type doping of InP with MOVPE growth technique
作者： M. Ezzedini , I. Zeydi , S. El Kazzi , S. Jiang , W. Guo
DOI: 10.1016/J.JALLCOM.2015.08.095
关键词: Epitaxy 、 Materials science 、 Dopant 、 Analytical chemistry 、 Hall effect 、 Metalorganic vapour phase epitaxy 、 Crystallinity 、 Photoluminescence 、 Doping 、 Indium phosphide
摘要: Abstract Bis-cyclopentadienyl magnesium (Cp2Mg) is used as a p-type dopant in Indium Phosphide (InP) which grown by metalorganic vapor phase epitaxy (MOVPE). The holes carriers concentration and (Mg) incorporation efficiency are studied using Hall effect measurements, high-resolution X-ray diffraction (HR-XRD), Secondary ion mass (SIMS), Nikon interference contrast Normarski microscope photoluminescence (PL) spectroscopy-type InP layers with up to 2.3 × 1018 cm−3 obtained. From PL the doped samples have near emission band (B–B) transition, an Mg-related band–acceptor (B–A) donor–acceptor (D–A) transition. We demonstrated that increase of Mg flow was effective control intrinsic n-type doping coming from carbon impurities precursors but at cost crystallinity degradation originating too high atoms lattice.
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