Growth and characterization of Ge nanostructures selectively grown on patterned Si
作者： MH Cheng , Wei-Xin Ni , GL Luo , SC Huang , JJ Chang
DOI: 10.1016/J.TSF.2008.08.149
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摘要: By utilizing different distribution of strain fields around the edges oxide, which are dominated by a series sizes oxide-patterned windows, long-range ordered self-assembly Ge nanostructur ...
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