Characterization of short-period Sim Gen superlattices by high-resolution transmission electron microscopy and X-ray diffraction

摘要: Abstract High-resolution and analytical transmission electron microscopy as well X-ray diffraction were used to characterize the structure of short-period strained-layer (Si m Ge n ) N superlattices ( monolayers Si, Ge, total number periods T = 300–500 °C) on different SiGe alloy buffer layers Si(100) substrates. By a combination these methods, detailed information can be obtained about periodicity, interface roughness an atomic scale, strain average composition superlattices. Superlattices good morphology grown, although defects still present. thin buffers contained rather high defect-densities in general, whereas much lower for grown thick buffers, especially those with gradients.