Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures
作者： F. Pezzoli , E. Bonera , E. Grilli , M. Guzzi , S. Sanguinetti
DOI: 10.1016/J.MSSP.2008.09.012
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摘要: Abstract A procedure for the quantitative measurement of composition and strain in epitaxial Si 1 - x Ge / heterostructures by means Raman spectroscopy any concentration is presented. The calibration parameters this involved growth a set heteroepitaxial layers spanning range from pure to Ge. Different conditions were established highly controlled way tailoring substrate lattice parameter. Through comparative analysis reciprocal space mapping we obtained phonon energy variation due biaxial deformation, as well curves dependence band frequencies on alloy composition. With these new calibrations, provides an accuracy determination comparable that X-ray diffraction, but with added advantage high-spatial resolution resonance-induced surface confinement.
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