作者: Hideaki Adachi , Takao Kawaguchi , Kentaro Setsune , Kenzo Ohji , Kiyotaka Wasa
DOI: 10.1063/1.93795
关键词: Sputtering 、 Crystal structure 、 Lanthanum compounds 、 Integrated circuit 、 Optoelectronics 、 Sapphire 、 Epitaxy 、 Thin film 、 Planar magnetron 、 Materials science 、 Physics and Astronomy (miscellaneous)
摘要: Epitaxial (Pb, La)(Zr, Ti)O 3 thin films were grown successfully on (0001) sapphire substrates at below 600 C. High quadratic electro‐optic coefficient of 0.8×10 − 1 6 (m/V) 2 was also …