作者: A. T. Hanbicki , O. M. J. van ’t Erve , R. Magno , G. Kioseoglou , C. H. Li
DOI: 10.1063/1.1580631
关键词: Semiconductor 、 Condensed matter physics 、 Schottky barrier 、 Quantum well 、 Single step 、 Anomaly (physics) 、 Phonon 、 Materials science 、 Spin injection 、 Quantum tunnelling
摘要: Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through reverse-biased Fe/AlGaAs Schottky contact. An analysis the transport data using Rowell criteria demonstrates that single step tunneling is dominant mechanism. The current-voltage show clear zero-bias anomaly and phonon signatures corresponding to GaAs-like AlAs-like longitudinal-optical modes AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation several theoretical analyses indicating enables significant from metal into semiconductor.