Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier

作者: A. T. Hanbicki , O. M. J. van ’t Erve , R. Magno , G. Kioseoglou , C. H. Li

DOI: 10.1063/1.1580631

关键词: SemiconductorCondensed matter physicsSchottky barrierQuantum wellSingle stepAnomaly (physics)PhononMaterials scienceSpin injectionQuantum tunnelling

摘要: Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through reverse-biased Fe/AlGaAs Schottky contact. An analysis the transport data using Rowell criteria demonstrates that single step tunneling is dominant mechanism. The current-voltage show clear zero-bias anomaly and phonon signatures corresponding to GaAs-like AlAs-like longitudinal-optical modes AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation several theoretical analyses indicating enables significant from metal into semiconductor.

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