Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
作者： A. Pirovano , A.L. Lacaita , A. Pacelli , A. Benvenuti
DOI: 10.1109/ESSDERC.2000.194790
关键词: Voltage 、 Doping profile 、 Analytical chemistry 、 Differential capacitance 、 Image resolution 、 Capacitance 、 Interface (computing) 、 Materials science 、 Inverse problem 、 Extraction (chemistry)
摘要:
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