The influence of debye length on the C-V measurement of doping profiles

摘要: The doping profile of a semiconductor is given only approximately by the conventional analysis C-V measurements. present study employs computer simulation semiconductors with one-sided profiles that consist high and low doped sections joined steps linear ramps. computation yields apparent would be obtained use data, this result compared actual profile, majority-carrier distribution, outcome correction previously proposed in literature. results show step cannot resolved satisfactorily to less than several Debye lengths corresponding on side profile. A ramp distinguished accurately from unless its width appreciably greater length. Furthermore, not identical distribution contacts far away, as has been suggested, discrepancy shown depend which depletion done.