Lateral Spread of the Proton Isolation Layer in GaAs

摘要: When ions are implanted into a tilted target, information on the lateral spread of and damage is contained in depth distribution target. Using this principle, proton isolation layer GaAs was measured by Copeland method. It found that largest near at which carrier removal rate maximum it increases as incident energy increases. However, ratio to longitudinal spreads decreases with increasing energy, there no significant change after annealing.