Backscattering study on lateral spread of implanted ions
作者： Seijiro Furukawa , Hideki Matsumura
DOI: 10.1063/1.1654577
关键词:
摘要: Without ambiguities due to the cutting angle of a mask edge and annealing process, lateral spread implanted Kr ions into Si substrates has been directly measured by He+ backscattering technique. The experimental results show good agreement with theoretical predictions.
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