作者: Seijiro Furukawa , Hideki Matsumura , Hiroshi Ishiwara
DOI: 10.1143/JJAP.11.134
关键词: Distribution (mathematics) 、 Computational physics 、 Differential equation 、 Range (statistics) 、 Gaussian 、 Ion implantation 、 Ion 、 Analytical chemistry 、 Physics 、 Distribution function 、 Error function
摘要: This paper presents a theoretical analysis on the lateral spread of distribution for implanted ions in amorphous targets. First, it is shown that solutions second order differential equations concerning moments ranges are necessary and sufficient to estimate distribution, if Gaussian assumed. The calculated results , presented. Next, actual function along direction approximately expressed by complementary error at window edge, case when through mask-window. variation with incident ion mass also calculated. From these calculations, concluded can not be neglected light such as B+ Si.