Numerical Simulation of Impurity Redistribution Near Mask Edges
作者： R. Tielert
DOI: 10.1007/978-94-009-6842-4_9
关键词:
摘要: Two-dimensional device analysis programs have become a commonly used tool for the development of integrated circuits. The two-dimensional doping distributions being crucial input data those programs, are usually approximated on basis one-dimensional process models or profile measurements. Lateral spreading distributions, however, is no longer second order effect in scaled down devices and needs accurate determination to enable reliable prediction device’s electrical performance.
springer.com
sci-hub.st 参考文章(36)
Atomic diffusion in semiconductors Plenum Press. ,(1973) , 10.1007/978-1-4615-8636-4
B. L. Crowder, J. F. Ziegler, F. F. Morehead, G. W. Cole, The Application of Ion Implantation to the Study of Diffusion of Boron in Silicon Ion Implantation in Semiconductors and Other Materials. pp. 267- 274 ,(1973) , 10.1007/978-1-4684-2064-7_23
Olgierd Cecil Zienkiewicz, PB Morice, The Finite Element Method In Engineering Science ,(1971)
Sparse matrices and their applications International Business Machines Corporation. ,(1972) , 10.1007/978-1-4615-8675-3
Robert W Dutton, Dimitri A Antoniadis, Stephen E Hansen, SUPREM II -- A Program for IC Process Modeling and Simulation. ,(1978)
M. Y. Tsai, F. F. Morehead, J. E. E. Baglin, A. E. Michel, Shallow junctions by high‐dose As implants in Si: experiments and modeling Journal of Applied Physics. ,vol. 51, pp. 3230- 3235 ,(1980) , 10.1063/1.328078
R. B. Fair, Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview Journal of The Electrochemical Society. ,vol. 128, pp. 1360- 1368 ,(1981) , 10.1149/1.2127636
Daeje Chin, M.R. Kump, Hee-Gook Lee, R.W. Dutton, Process design using two-dimensional process and device simulators IEEE Transactions on Electron Devices. ,vol. 29, pp. 336- 340 ,(1982) , 10.1109/T-ED.1982.20704
Joseph E. Pasciak, Alan George, Joseph W. Liu, Computer solution of large sparse positive definite systems Mathematics of Computation. ,vol. 39, pp. 305- ,(1982) , 10.2307/2007640
F. Jahnel, H. Ryssel, G. Prinke, K. Hoffmann, K. Müller, J. Biersack, R. Henkelmann, Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments Nuclear Instruments and Methods. pp. 223- 229 ,(1981) , 10.1016/0029-554X(81)90691-1