Precise control of epitaxy of graphene by microfabricating SiC substrate
作者： H. Fukidome , Y. Kawai , F. Fromm , M. Kotsugi , H. Handa
DOI: 10.1063/1.4740271
关键词: Epitaxy 、 Microfabrication 、 Wide-bandgap semiconductor 、 Wafer 、 Sic substrate 、 Electronic properties 、 Graphene 、 Nanotechnology 、 Layer thickness 、 Materials science
摘要: Epitaxial graphene (EG) on SiC is promising owing to a capability produce high-quality film wafer scale. One of the remaining issues microscopic thickness variation EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that layer are minimized by using microfabricated substrates spatially confines epitaxy. This technique will contribute realization highly reliable devices.
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