Fabrication of arrays of large step‐free regions on Si(001)

摘要: In this letter we describe a method for producing large areas of Si(001) surfaces which are (i) free atomic steps and (ii) arranged in regular patterns on the wafer. The first step is fabrication two‐dimensional grating structure using e‐beam lithography reactive ion etching. This then annealed within appropriate temperature window ultrahigh vacuum to produce desired array (001) step‐free regions. We illustrate success through use low‐energy electron microscopy few repeat spacings test structures each extending over 3×3 mm2 area. Alternative processing discussed as well application submicron device technology.