System and method for making photomasks
作者： Carl A. Vickery , Thomas J. Aton
DOI:
关键词: Process (computing) 、 Photomask 、 Computer vision 、 Set (abstract data type) 、 Artificial intelligence 、 Engineering drawing 、 Computer science
摘要: The present application is directed a method for preparing mask pattern database proximity correction. comprises receiving data from design database. Mask describing first photomask forming device features generated. to be corrected effects in correction process. A second set of accessed comprising information about features, wherein at least portion the relevant manipulated so as improve process, compared with same process which was included without being manipulated. At and
google.de 参考文章(38)
Stefan Hunsche, Jun Ye, Method for selecting and optimizing exposure tool using an individual mask error model ,(2006)
Michel Luc Cote, Christophe Pierrat, Optical proximity correction for phase shifting photolithographic masks ,(2002)
Christophe Pierrat, Effective proximity effect correction methodology ,(2004)
Burn J. Lin, Jan-Wen You, Chung-Hsing Chang, Chang-Ming Dai, Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA ,(2004)
Robert A. Soper, Thomas J. Aton, Method and system for mask pattern correction ,(2002)
Te-Hung Wu, Sheng-Yuan Huang, Pei-Ru Tsai, Chuen-Huei Yang, Chia-Wei Huang, Method for correcting photomask pattern ,(2007)
Charles H. Wallace, Swaminathan (Sam) Sivakumar, Paul A. Nyhus, Sub-resolution assist features ,(2004)
Benjamen Michael Rathshack, James Walter Blatchford, Gate critical dimension variation by use of ghost features ,(2005)
William Stanton, Method for designing and making photolithographic reticle, reticle, and photolithographic process ,(1999)