Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
作者： Koji Aizawa , Byung-Eun Park , Yoshihito Kawashima , Kazuhiro Takahashi , Hiroshi Ishiwara
DOI: 10.1063/1.1806274
关键词: Materials science 、 Ferroelectricity 、 Field-effect transistor 、 Vacuum deposition 、 Transistor 、 Pulse-width modulation 、 Layer (electronics) 、 Silicon 、 Optoelectronics 、 Spin coating
摘要: Electrical properties of the p-channel metal-ferroelectric-insulator-silicon field-effect transistors (MFISFETs) using Pt∕SrBi2Ta2O9(SBT)∕HfO2∕Si and Pt∕(Bi,La)4Ti3O12(BLT)∕HfO2∕Si gate structures were investigated. Sol-gel-derived 400-nm-thick SBT BLT films deposited on an HfO2 film approximately 10 nm in thickness. The channel width length fabricated MFISFETs 50 5 μm, respectively. significant drain current on∕off ratios retained for over days at room temperature. a Pt∕SBT∕HfO2∕Si structure exhibited ratio about 105 even after 15.9 had elapsed. It was also found that write pulse as short 20 ns enough obtaining ratio. is concluded from these results one best buffer layer materials realizing with long data retention high operation speed.
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