Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices
作者： A. Roy , A. Dhar , S. K. Ray
DOI: 10.1063/1.2978233
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摘要: We have investigated the interfacial and frequency dependent electrical properties of metal-ferroelectric-insulator-semiconductor capacitors with SrBi2Ta2O9 (SBT) ferroelectric films grown on ZrO2 buffer layer coated Si. Heterostructure SBT thin were deposited using rf magnetron sputtering. Interfacial surface roughness parameters heterostructures extracted from simulation specular x-ray reflectivity data. The structure exhibited clockwise capacitance-voltage hysteresis a maximum memory window 2.0 V at bias voltage ±7 V. Frequency (5 kHz–1 MHz) measurements room temperature indicated that originates domain reversal. A minimum leakage current density 4×10−8 A/cm2 fabricated an applied ±5 V revealed prevents diffusion between film substrate, resulting in improvement interface quality. charge retention ...
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