Novel fatigue-free layered structure ferroelectric thin films

摘要: For the first time, fatigue-free ferroelectric thin-film capacitors have been fabricated, using pulsed laser deposition, with layer-structure family of oxides as material. Stoichiometric thin films layer-structured SiBr2(TaxNb2−x)O9 (0 < x 2) compounds were successfully deposited on platinized Si/SiO2 wafers. Technological opportunities now exist for development commercially viable random access memory devices these materials. So far, this has primarily hindered by degradation problems such fatigue in currently investigated film capacitors, e.g. PbZrxTi1−xO3 Pt electrodes. The identification materials and their processing, structure properties are discussed paper. show very good hysteresis characteristics a remnant polarization value 11 μC cm−2, no was observed up to 109 switching cycles.