Enhanced ferroelectric properties in laser-ablated SrBi2Nb2O9 thin films on platinized silicon substrate
作者： Rasmi R. Das , P. Bhattacharya , Ram S. Katiyar
DOI: 10.1063/1.1502440
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摘要: Non-c-axis-oriented SrBi2Nb2O9 (SBN) thin films were grown on Pt/TiO2/SiO2/Si substrates using the pulsed-laser-deposition technique. X-ray diffraction results confirmed textured growth of SBN along (115) and (200) orientations. The increase in value dielectric permittivity decrease tangential loss with an annealing temperature attributed to grain size dependence. annealed at 750 °C exhibited a maximum constant ∼346 dissipation factor 0.02. Thin certain deposition parameters highest remanent polarization (Pr) coercive field, 25.7 μC/cm2 198 kV/cm, respectively. There was minimal (<20%) degradation switchable (P*−P∧) after 1010 switching cycles. At lower leakage current follows ohmic behavior, higher up 100 density about 5×10−7 A/cm2.
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