SiC Power Devices
作者： T. P. Chow , M. Ghezzo
DOI: 10.1557/PROC-423-9
关键词: Power (physics) 、 Electronic engineering 、 Power semiconductor device 、 Silicon 、 Materials science 、 Motor drive 、 Process (computing) 、 Performance improvement 、 Power switching 、 Fabrication
摘要: The present status of SiC high-voltage power switching devices is reviewed. figures merits that have been used for unipolar and bipolar to quantify the intrinsic performance improvement over silicon are presented. Analytical numerical modeling simulations estimate BV device choice described. active area termination design trenched-gate MOS transistors, together with an integrated process their fabrication, progress in experimental demonstration material technology issues need be addressed commercialization discussed. Finally, impact on motor drive systems estimated.
sci-hub.se 参考文章(19)
T.P. Chow, R. Tyagi, Wide bandgap compound semiconductors for superior high-voltage unipolar power devices IEEE Transactions on Electron Devices. ,vol. 41, pp. 1481- 1483 ,(1994) , 10.1109/16.297751
S. Matsumoto, T. Ohno, H. Ishii, H. Yoshino, A high-performance self-aligned UMOSFET with a vertical trench contact structure IEEE Transactions on Electron Devices. ,vol. 41, pp. 814- 818 ,(1994) , 10.1109/16.285036
B.J. Baliga, Power semiconductor devices for variable-frequency drives Proceedings of the IEEE. ,vol. 82, pp. 1112- 1122 ,(1994) , 10.1109/5.301680
R. Raghunathan, D. Alok, B.J. Baliga, High voltage 4H-SiC Schottky barrier diodes IEEE Electron Device Letters. ,vol. 16, pp. 226- 227 ,(1995) , 10.1109/55.790716
K. Xie, J.H. Zhao, J.R. Flemish, T. Burke, W.R. Buchwald, G. Lorenzo, H. Singh, A high-current and high-temperature 6H-SiC thyristor IEEE Electron Device Letters. ,vol. 17, pp. 142- 144 ,(1996) , 10.1109/55.485194
P.M. Shenoy, B.J. Baliga, Planar, ion implanted, high voltage 6H-SiC P-N junction diodes IEEE Electron Device Letters. ,vol. 16, pp. 454- 456 ,(1995) , 10.1109/55.464815
P.G. Neudeck, D.J. Larkin, J.E. Starr, J.A. Powell, C.S. Salupo, L.G. Matus, Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates IEEE Transactions on Electron Devices. ,vol. 41, pp. 826- 835 ,(1994) , 10.1109/16.285038
M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla, H. Bakhru, Nitrogen-implanted SiC diodes using high-temperature implantation IEEE Electron Device Letters. ,vol. 13, pp. 639- 641 ,(1992) , 10.1109/55.192870
A. O. Konstantinov, The Temperature Dependence of Impact Ionization in Silicon Carbide, and Related Effects Springer Berlin Heidelberg. pp. 213- 219 ,(1992) , 10.1007/978-3-642-84402-7_31
Amorphous and Crystalline Silicon Carbide III Springer Berlin Heidelberg. ,(1992) , 10.1007/978-3-642-75048-9