Epitaxial growth of cerium oxide thin films by pulsed laser deposition
作者： G. Balakrishnan , P. Sudhakara , Abdul Wasy , Ha Sun Ho , K.S. Shin
DOI: 10.1016/J.TSF.2013.06.048
关键词: Pulsed laser deposition 、 Substrate (electronics) 、 Analytical chemistry 、 Cerium oxide 、 Atmospheric temperature range 、 Thin film 、 Materials science 、 Epitaxy 、 Fluence 、 Yttria-stabilized zirconia
摘要: Abstract The epitaxial cerium oxide (CeO 2 ) thin films were deposited on yttria stabilized zirconia (YSZ) (100) substrates at various substrate temperatures (673–973 K), energy densities (1–5 J/cm and repetition rates (5–30 Hz) with an optimized oxygen partial pressure of 3 Pa, by pulsed laser deposition technique. characterized X-ray diffraction atomic force microscopy to study the influence temperature, fluence rate epitaxy, growth mode surface morphology. studies revealed nature CeO (200) ‖ YSZ (100)) in temperature range 673–973 K. prepared low (1–3 (1–25 also indicated fully nature, whereas higher density (≥ 4 (30 deviation from epitaxy. showed formation dense uniform nanocrystallites smooth root mean square roughness increased increase rate.
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