Epitaxial growth of cerium oxide thin film buffer layers deposited by d.c. magnetron sputtering

摘要: Abstract We studied the epitaxial growth of CeO2 thin films as a function deposition temperature (300–850°C) and film thickness (100–900 nm). The were grown on YSZ(100), MgO(100) Al2O3( 1 02 ) (r-plane sapphire) substrates by reactive d.c. magnetron sputtering cerium metal target in an Ar/O2 plasma. crystalline quality biaxial alignment investigated using X-ray diffraction techniques (θ−2θ, ω-scans, pole figures, φ-scans) to determine degree c-axis (out-of-plane) in-plane alignments given FWHM Δω Δφ, respectively. CeO2/YSZ(100) heteroepitaxy occurred below 300°C while at higher temperatures resulted single-crystal with Δω=0.1° Δφ=0.2° 650–750°C. CeO2/MgO(100) CeO2/Al2O3( was evident 600°C developed nearly perfect 850°C Δω=1° Δφ=5° for CeO2/MgO(100), Δω=5° Δφ=9° ).