Influence of interfacial properties on thermal transport at gold:silicon contacts

摘要: We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior deposition, substrates receive pretreatments in order modify interfacial properties, i.e., bonding and structural disorder. Through inclusion of a Ti adhesion layer removal native oxide, conductance can be enhanced factor four 296 K. Furthermore, roughness is found have negligible effect, which we attribute already low poorly bonded contacts.