Thermal boundary resistance at Au/Ge/Ge and Au/Si/Ge interfaces

摘要: Amorphous Ge (a-Ge), crystalline (c-Ge), and amorphous Si (a-Si) thin films were deposited on a substrate at different temperatures by magnetron sputtering. We measured thermal boundary resistance (TBR) in Au/Ge/Ge Au/Si/Ge three-layer samples. The TBR Au/a-Ge/Ge Au/a-Si/Ge decreased slightly with increasing deposition temperature. values larger than the predicted diffuse mismatch model. Furthermore, it is interesting to note that Au/c-Ge/Ge was twofold Au/a-Ge/Ge. Cross-sectional transmission electron microscopy conducted investigate interfacial morphology of results indicate state play an important role modifying phonon density states properties. Our findings are great importance for applications involving management micro- optoelectronic devices, development barrier coatings thermoelectric materials high figures-of-merit.