Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
作者： Ye Fan
DOI:
关键词: Low-k dielectric 、 Time-dependent gate oxide breakdown 、 Interconnection 、 Non-volatile memory 、 Electrical engineering 、 Materials science 、 Optoelectronics 、 Process (computing) 、 Resistive switching 、 CMOS 、 Conductive filament
摘要:
参考文章(14)
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