Write and Erase Threshold Voltage Interdependence in Resistive Switching Memory Cells
作者： Gargi Ghosh , Marius K. Orlowski
关键词: Electrical engineering 、 Turn (geometry) 、 Resistive switching memory 、 Protein filament 、 Resistive random-access memory 、 Condensed matter physics 、 Reset (computing) 、 Random access memory 、 Threshold voltage 、 Physics 、 Voltage
摘要: A statistical dependence of set voltage $V_{\rm set}$ on the preceding reset $V_{{\rm {reset}}}$ is observed in resistive memory arrays and explained terms two interlocking mechanisms. This can be replicated a single device by intentionally varying reset}$ values various linear ramp rates. The latter mechanism well modeled under assumption that critical heat deposited locally filament triggers rupture filament. Mechanisms are proposed to explain impact different rates operation ruptured gap affect, turn, value subsequent operation. Based these observations, one-time tightening procedure designed, leading tightened distributions.
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