Low temperature characteristic of ITO/SiOx/c-Si heterojunction solar cell
作者： HW Du , J Yang , Y Li , M Gao , SM Chen
DOI: 10.1088/0022-3727/48/35/355101
关键词: Solar cell 、 Open-circuit voltage 、 Electronic band structure 、 Silicon 、 Passivation 、 Band gap 、 Analytical chemistry 、 Optoelectronics 、 Materials science 、 Heterojunction 、 Fermi level
摘要: Based on the temperature-dependent measurements and numerical calculation, temperature response of photovoltaic parameters for a ITO/SiO x /c-Si heterojunction solar cell have been investigated in ascending sorting 10–300 K. Under unique energy concentrated photon irradiation with wavelength 405 nm power density 667 mW cm−2, it was found that short-circuit current (I SC) nonlinearly increased open-circuit voltage (V OC) decreased temperature. The good passivation ITO/c-Si interface by concomitant SiO buffer layer leads to rare recombination carriers intermediate region. inversion model indicated band gap c-silicon narrowed Fermi level n-type silicon () tended intrinsic (in middle gap) increase temperature, which lessened built-in D) thus V OC. However, reduction 90% OC is attributed shift rather than narrowing. Through analysis current–voltage relationship data fitting, we infer series resistance (R s) not responsible I SC, but absorption coefficient depletion-width are causes enhancing SC. Mostly, interaction photon-generated excess 'cold hole' acoustic phonon n-Si would influence variation ph or SC
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