ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell $

摘要: Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 films between n-type ZnO:Al (AZO) p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density low 3×10−7 A/cm2, a fill factor up to 71.3%, open-circuit voltage high 527 mV obtained, achieving conversion efficiency 8% for the rare earth oxide La2O3. ZrO2 notably Al2O3 show drawbacks performance suggesting an adverse reactivity with AZO also indicated X-ray Photoelectron Spectroscopy.