Synthesis of nanostructured Al-doped zinc oxide films on Si for solar cells applications
作者： O. Lupan , S. Shishiyanu , V. Ursaki , H. Khallaf , L. Chow
DOI: 10.1016/J.SOLMAT.2009.03.012
关键词:
摘要: Abstract Al-doped ZnO thin films have been prepared by a novel successive chemical solution deposition technique. The variation in morphological, structural, electrical, and optical properties of nanostructured with doping concentration is investigated details. It was demonstrated that rapid photothermal processing (RPP) improves the quality according to enhancement resonant Raman scattering efficiency, suppression visible luminescence increase RPP temperature. found from I–V characteristics ZnO/Si heterojunction average short-circuit current density about 8 mA/cm2. For 1%Al-doped ZnO/SiO2/Si structure, 28 mA/cm2. improvement shown may be assigned partially reduction defect after RPP. correlations between composition, microstructure solar cell structures are discussed. chemically deposited film offers wider applications low-cost cells structures.
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