Optimizing n-ZnO/p-Si heterojunctions for photodiode applications

摘要: Abstract N-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. The substrate temperatures 300, 400, 480 and 550°C were taken for the film using an Ar/O 2 ratio 6:1. All diodes show typical rectifying behaviors as characterized current–voltage ( I – V ) measurement in a dark room their photoelectric effects from observed under illumination monochromatic red light with wavelength 670 nm. Maximum amount photo-current or responsivity is obtained reverse bias conditions n-ZnO/p-Si when ZnO was deposited at 480°C while best stoichiometric crystalline quality. Junction leakage current much higher diode than other diodes. It thus concluded that photodiode quality junction important p-Si.