Interfacial stability of SnO2/n‐Si and In2O3:Sn/n‐Si heterojunction solar cells

摘要: High efficiency SnO2/n‐Si and In2O3:Sn/n‐Si solar cells have been fabricated which when encapsulated in EVA (ethylene vinyl acetate copolymers) kept at temperatures below 200 °C exhibit long‐term stability. However, the absence of proper encapsulation or high temperatures, it is possible for properties heterojunction to suffer degradation through two distinct mechanisms, one optical other thermal nature. In either case, losses Voc can be correlated with changes dark current‐voltage characteristics: light stress increases saturation current J0, while heat decreases diode quality faction n. Both mechanisms are related stored charges SiOx interphase region between conducting oxide silicon. The process only relevant above 300 °C, evidenced if ultraviolet incident on cell. Thus, at...