Interfacial engineering of two-dimensional nano-structured materials by atomic layer deposition

摘要: Abstract Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise nanometer-thin two-dimensional (2D) nanostructures. It a cyclic process relies on sequential self-terminating reactions between gas phase precursor molecules solid surface. ALD especially advantageous when the film quality or thickness critical, offering ultra-high aspect ratios. digital control atomic level by one layer at time, as well pinhole-free films even over very large complex areas. Digital extends sandwiches, hetero-structures, nano-laminates, metal oxides, graded index layers doping, it perfect conformal challenging 2D electrodes various functional devices. The technique’s capabilities are presented example of ALD-developed ultra-thin tungsten oxide (WO3) area standard 4” Si substrates. discussed enable endorse employment this technique development hetero-nanostructure semiconductors unique properties.