Photo-stimulated charge carrier transport in a polydiacetylene single crystal (PTS)
作者： T Blum , B Ries , H Bassler
DOI: 10.1088/0022-3719/19/19/020
关键词: Quantum tunnelling 、 Excited state 、 Charge carrier 、 Light intensity 、 Single crystal 、 Optoelectronics 、 Relaxation (NMR) 、 Molecular physics 、 Excitation 、 Materials science 、 Crystal
摘要: The rise time behaviour of photocurrents in a PTS crystal excited by rectangular light pulses has been measured and the rate constant K(t) charge carrier relaxation evaluated. At short times (t 10-2 s) follows power law characteristic transport controlled tunnelling barriers. intermediate K attains value that increases with intensity according to Kopt approximately I0.85. effect is explained terms an interaction between delocalised optical excitation chain localised at defect. It concluded photo-simulated barrier crossing rate-determining step for presence photon field.
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