Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors
作者： N. Hernandez-Como , A. Morales-Acevedo , M. Aleman , I. Mejia , M.A. Quevedo-Lopez
DOI: 10.1016/J.MEE.2015.10.017
关键词: Doping 、 Substrate (electronics) 、 Sputtering 、 Contact resistance 、 Optoelectronics 、 Sputter deposition 、 Materials science 、 Thin film 、 Threshold voltage 、 Thin-film transistor
摘要: Aluminum doped zinc oxide (AZO) films were deposited by confocal RF magnetron sputtering at different substrate temperatures. AZO with a transparency up to 90% in the visible spectrum obtained. Polycrystalline films, planes (002) and (103) orientations of zincblende (hexagonal) structure, obtained temperatures higher than 60?C. The best 75?C, showed an electrical resistivity 8.8×10-4?-cm, carrier concentration 4×1020cm-3 mobility 20cm2/V-s. These are appropriate values for solar cell applications. In addition, ZnO-based thin-film transistors (TFTs) fabricated evaluating behavior as source drain contacts on transistors. field effect threshold voltage devices 20cm2/V-s 7V, respectively. TFTs Ion/Ioff ratio 9 orders magnitude. A specific contact resistance approximately 0.06?-cm2 was determined AZO/ZnO interface. This result corresponds first report ZnO/AZO maximum processing temperature 100?C. Therefore, this TFT technology is fully compatible flexible substrates can be used transparent large area electronics. Display Omitted Substrate above 60?C improves overall properties films.Hexagonal-AZO dominating orientations.ZnO-based Source-Drain electrodes.The 7V.The 0.06?-cm2.
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