Current-voltage-temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes
作者： N Hernandez-Como , A Rodriguez-Lopez , FJ Hernandez-Cuevas , J Munguia , R Garcia
DOI: 10.1088/0268-1242/31/11/115007
关键词:
摘要: In this work, we report the temperature dependence of electrical parameters PEDOT:PSS/ZnO Schottky barrier diodes (SBDs) grown on glass substrates. To understand current conduction mechanism, current–voltage–temperature characteristics thin film SBDs were studied. The extracted with both thermionic emission and Cheung models. obtained Richardson constant effective height 5 A cm−2 °K−2 0.74 eV, respectively. diode ideality factor was 1.5 series resistance 36 Ω. All these turned out to be independent which associated dominant transport mechanisms emission. slightly deviates from theoretical values due presence interfacial defects created by preparation deposition PEDOT:PSS ZnO crystallinity. conductive polymer PEDOT:PSS, as a contact ZnO, arises an alternative expensive noble metals: Pt, Pd, Ag metal oxides: IrOx, PdOx, PtOx.
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