ZnTe: bound excitons

作者: J. Gutowski , K. Sebald , T. Voss

DOI: 10.1007/978-3-540-92140-0_360

关键词: SemiconductorExcitonCondensed matter physicsPhysical propertyMaterials science

摘要:

参考文章(28)
R Grill, J Franc, P Hl dek, I Turkevych, E Belas, P H schl, Defect-induced optical transitions in CdTe and Cd0.96Zn0.04Te Semiconductor Science and Technology. ,vol. 17, pp. 1282- 1287 ,(2002) , 10.1088/0268-1242/17/12/313
J Hamann, A Burchard, M Deicher, T Filz, V Ostheimer, F Strasser, H Wolf, ISOLDE Collaboration, Th Wichert, Luminescence and influence of defect concentration on excitons in 197Hg/197Au-doped CdTe Physica B-condensed Matter. ,vol. 273, pp. 870- 874 ,(1999) , 10.1016/S0921-4526(99)00533-5
D. Seghier, H.P. Gislason, C. Morhain, M. Teisseire, E. Tourni�, G. Neu, J.-P. Faurie, Self-compensation of the phosphorus acceptor in ZnSe Physica Status Solidi B-basic Solid State Physics. ,vol. 229, pp. 251- 255 ,(2002) , 10.1002/1521-3951(200201)229:1<251::AID-PSSB251>3.0.CO;2-3
B Reinhold, M Wienecke, Shallow doping of wide band-gap II-VI compounds Physica B-condensed Matter. ,vol. 273, pp. 856- 860 ,(1999) , 10.1016/S0921-4526(99)00524-4
S. Seto, K. Suzuki, V.N. Abastillas Jr, K. Inabe, Compensating related defects in In-doped bulk CdTe Journal of Crystal Growth. ,vol. 214, pp. 974- 978 ,(2000) , 10.1016/S0022-0248(00)00220-7
M. Cárdenas-García, J. Aguilar-Hernández, G. Contreras-Puente, Study of the radiative mechanism of the 1.471-eV luminescent band in polycrystalline CdTe films Thin Solid Films. ,vol. 480, pp. 269- 272 ,(2005) , 10.1016/J.TSF.2004.11.062
J AGUILARHERNANDEZ, M CARDENASGARCIA, G CONTRERASPUENTE, J VIDALLARRAMENDI, Analysis of the 1.55 eV PL band of CdTe polycrystalline films Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 102, pp. 203- 206 ,(2003) , 10.1016/S0921-5107(02)00659-1
Bernard Gil, Pierre Bigenwald, Mathieu Leroux, Plamen P. Paskov, Bo Monemar, Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors Physical Review B. ,vol. 75, pp. 085204- ,(2007) , 10.1103/PHYSREVB.75.085204
Y. S. Joh, Y. G. Kim, J. H. Song, E. D. Sim, K. S. Baek, S. K. Chang, Electrical and optical properties of ZnSe:N epilayers Physica Status Solidi (c). ,vol. 1, pp. 714- 717 ,(2004) , 10.1002/PSSC.200304199
J Hamann, A Burchard, M Deicher, T Filz, S Lany, V Ostheimer, F Strasser, H Wolf, Th Wichert, Isolde Collaboration, Identification of Ag-acceptors in 111Ag/111Cd doped ZnTe and CdTe Journal of Crystal Growth. ,vol. 214, pp. 207- 211 ,(2000) , 10.1016/S0022-0248(00)00083-X