Compensating related defects in In-doped bulk CdTe
作者： S. Seto , K. Suzuki , V.N. Abastillas Jr , K. Inabe
DOI: 10.1016/S0022-0248(00)00220-7
关键词:
摘要: We report on annealing behaviors of electrical and optical properties In-doped CdTe to investigate the self-compensation in high-resistivity CdTe. A characteristic luminescence line at 1.5842 eV is found be due emissions from bound excitons trapped compensating related defects, which ascribed a Cd-vacancy/indium complex. These defect complexes act as acceptors are responsible for through balance between doped indium donors complex acceptors. Magneto-optical measurements also support this mechanism.
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