Silicon-based fabrication process for production of optical waveguides

摘要: The fabrication of silicon waveguides for use as optical interconnects in optoelectronic integrated circuits wavelengths beyond 1.1 /spl mu/m is described. process does not require silicon-on-insulator technology, and only uses VLSI processing techniques. Long, thin mesas are etched from a substrate masked along their sides with nitride. ridges then isotropically dry to undercut the walls. remaining thermally oxidised leave single-crystal core encased dioxide. cross-sectional area cores determined by anisotropic etch oxidation time. Waveguides dimensions six four microns surrounded micron-thick oxide layer have been fabricated. Results launching light wavelength 1.5 into this structure show that it suitable interconnect applications.