Back-to-back Interface diodes induced symmetrical negative differential resistance and reversible bipolar resistive switching in β-CuSCN trigonal pyramid micro/nanoarray

摘要: Abstract As a superior p-type wide bandgap semiconductor, β-CuSCN has huge potential in optoelectronic device application, and however its conduction could intensively be affected by externally applied bias. Here, we demonstrate electrodeposited individual trigonal micro/nanopyramids their array films can show Cu+ trap-controlled bias dependence of electron transport. Before being subjected to large reverse or unidirectional bias, cyclic I V curves are coincident resulted from bulk-trap related carrier hopping. At relatively bidirectional operation they symmetrically present two hysteresis loops with negative differential resistance (NDR), meanwhile accompany nonvolatile resistive switching (RS) feature. After respectively fixed opposite directions, more importantly, switchable classic asymmetrical bipolar RS successfully realized at low The formation reversion depletion layer, the minority carriers (electrons) injection into traps surface connected electrode, plays crucial role. Under synergistic effect trap-related back-to-back devices results symmetrical NDR. enhanced electrode due presence induced high narrow barrier, conversely it disappears positive hole injection-induced ohmic contact. Then, set reset filling emptying holes thin layer forward voltages, respectively, showing behavior. Due stability, reversibility, nondestructive readout, as well remarkable cycle performance, bias-governed makes candidate next-generation erasable RRAM devices.