The evolution of resistive switching behaviors dependent on interface transition layers in Cu/Al/FTO nanostructure
作者： Dai-Wen Tao , Zi-Jin Jiang , Jian-Biao Chen , Xiao-Gang Wang , Yan Li
DOI: 10.1016/J.JALLCOM.2020.154270
关键词:
摘要: Abstract Here, the Cu/Al/FTO layered nanostructure was designed and manufactured for investigating roles of interface transition layers in its resistive switching (RS) behaviors. The presence confirmed by X-ray photoelectron spectroscopy (XPS) depth profile scans, indeed there is a very thin Al2O3 layer (interface 1, denoted as I1) produced natural oxidation within Cu/Al interfaces, thicker 2, I2, consisting Al, Al2O3, SnO SnO2) generated interdiffusion redox reaction between Al/FTO interfaces. test results showed that device, with actual structure Cu/I1/Al/I2/FTO, could show evolution behaviors: from irreversible write-once-read-many-times (WORM) characteristics to reversible bipolar (BRS) behaviors negative differential resistance (NDR) effect subsequent disappearance recovery BRS. Correlation analysis suggests observed RS strongly depend on permanent rupture pre-existing Al conductive filaments (Al-CFs) their evolution. This work gives an insight into role provides simple way design build new sandwiched using nonvolatile memory.
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