Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
作者： Katarzyna Gas , Jaroslaw Z. Domagala , Rafal Jakiela , Gerd Kunert , Piotr Dluzewski
DOI: 10.1016/J.JALLCOM.2018.03.056
关键词: Ferromagnetism 、 Molecular beam epitaxy 、 Spectroscopy 、 Phase (matter) 、 Secondary ion mass spectrometry 、 Synchrotron 、 Analytical chemistry 、 Microstructure 、 Materials science 、 Transmission electron microscopy
摘要: Abstract A range of high quality Ga1−xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 ≤ x ≤ 10%, having the x value tuned changing growth temperature Tg between 700 and 590 °C, respectively. We present a systematic structural microstructure characterization atomic force microscopy, secondary ion mass spectrometry, transmission electron powder-like resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at lowest Tg. Our synchrotron based absorption near-edge spectroscopy supported density functional theory modeling superconducting quantum interference device magnetometry results point to predominantly +3 configuration Mn in GaN thus ferromagnetic has observed > 5% 3
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sci-hub.se 参考文章(72)
K. W. Edmonds, C. R. Staddon, T. Dietl, A. D. Giddings, L. X. Zhao, R. P. Campion, M. Sawicki, S. V. Novikov, B. L. Gallagher, K. Y. Wang, C. T. Foxon, p-type conductivity in cubic (Ga,Mn)N thin films Applied Physics Letters. ,vol. 86, pp. 152114- ,(2005) , 10.1063/1.1900924
T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S. Kuroda, M. Tanaka, Pham Nam Hai, H. Katayama-Yoshida, Spinodal nanodecomposition in semiconductors doped with transition metals Reviews of Modern Physics. ,vol. 87, pp. 1311- 1377 ,(2015) , 10.1103/REVMODPHYS.87.1311
Wiktor Stefanowicz, Dariusz Sztenkiel, Bogdan Faina, Andreas Grois, Mauro Rovezzi, Thibaut Devillers, Francesco d’Acapito, Andrea Navarro-Quezada, Tian Li, Rafał Jakieła, Maciej Sawicki, Tomasz Dietl, Alberta Bonanni, Structural and paramagnetic properties of dilute Ga 1-x Mn x N Physical Review B. ,vol. 81, pp. 235210- ,(2010) , 10.1103/PHYSREVB.81.235210
W. Gebicki, J. Strzeszewski, G. Kamler, T. Szyszko, S. Podsiadło, Raman scattering study of Ga1−xMnxN crystals Applied Physics Letters. ,vol. 76, pp. 3870- 3872 ,(2000) , 10.1063/1.126804
M. Sawicki, T. Devillers, S. Gałęski, C. Simserides, S. Dobkowska, B. Faina, A. Grois, A. Navarro-Quezada, K. N. Trohidou, J. A. Majewski, T. Dietl, A. Bonanni, Origin of low-temperature magnetic ordering in Ga 1 − x Mn x N Physical Review B. ,vol. 85, pp. 205204- ,(2012) , 10.1103/PHYSREVB.85.205204
M H Kane, A Asghar, C R Vestal, M Strassburg, J Senawiratne, Z J Zhang, N Dietz, C J Summers, I T Ferguson, Magnetic and optical properties of Ga1−xMnxN grown by metalorganic chemical vapour deposition Semiconductor Science and Technology. ,vol. 20, ,(2005) , 10.1088/0268-1242/20/3/L02
M. Siekacz, A. Feduniewicz-Żmuda, G. Cywiński, M. Kryśko, I. Grzegory, S. Krukowski, K.E. Waldrip, W. Jantsch, Z.R. Wasilewski, S. Porowski, C. Skierbiszewski, Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy. Journal of Crystal Growth. ,vol. 310, pp. 3983- 3986 ,(2008) , 10.1016/J.JCRYSGRO.2008.06.011
Tomasz Dietl, Hideo Ohno, Dilute ferromagnetic semiconductors: Physics and spintronic structures Reviews of Modern Physics. ,vol. 86, pp. 187- 251 ,(2014) , 10.1103/REVMODPHYS.86.187
P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, Electrical characterization of GaN p-n junctions with and without threading dislocations Applied Physics Letters. ,vol. 73, pp. 975- 977 ,(1998) , 10.1063/1.122057
M Kocan, J Malindretos, M Roever, J Zenneck, T Niermann, D Mai, M Bertelli, M Seibt, A Rizzi, Mn incorporation in GaN thin layers grown by molecular-beam epitaxy Semiconductor Science and Technology. ,vol. 21, pp. 1348- 1353 ,(2006) , 10.1088/0268-1242/21/9/022