Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures
作者： Di Xiao , Wenguang Zhu , Ying Ran , Naoto Nagaosa , Satoshi Okamoto
DOI: 10.1038/NCOMMS1602
关键词: Electronic band structure 、 Condensed matter physics 、 Materials science 、 Quantum Hall effect 、 Heterojunction 、 Charge transfer insulators 、 Topological order 、 Electronic structure 、 Band gap 、 Topological insulator
摘要: … SrIrO 3 , the Fermi level is located inside the gap. Therefore, from the analogy to the TB model, (111) bilayers of LaOsO 3 and SrIrO 3 … asymmetric bilayer with YAlO 3 has smaller band …
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